FDMC8622: 100V N-Channel Shielded Gate Power Trench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.

Features

• Shielded Gate MOSFET Technology
• Max r_DS(on) = 56 mΩat V_GS = 10 V, I_D = 4 A
• Max r_DS(on) = 100 mΩat V_GS = 6 V, I_D = 3 A
• High performance trench technology for extremely low r_DS(on)
• High power and current handling capability in a widely used surface mount package
• 100% UIL Tested
• Termination is Lead-free and RoHS Compliant

Application Notes