FDMC86248: 150V N-Channel Power Trench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

• Max r_DS(on) = 90 mΩ at V_GS = 10 V, I_D = 3.4 A
  
• Max r_DS(on) = 125 mΩ at V_GS = 6 V, I_D = 2.9 A
  
• Advanced Package and Silicon combination for low r_DS(on) and high efficiency
  
• 100% UIL Tested
  
• RoHS Compliant
  

Application Notes