FDMC86260ET150: 150V N-Channel Power Trench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

• Extended T_J rating to 175°C
  
• Max r_DS(on) = 34 mΩ at V_GS = 10 V, I_D = 5.4 A
  
• Max r_DS(on) = 44 mΩ at V_GS = 6 V, I_D = 4.8 A
  
• High performance technology for extremely low r_DS(on)
  
• 100% UIL Tested
  
• Termination is Lead-free
  
• RoHS Compliant
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Application Notes