FDMC86262P: P-Channel PowerTrench® MOSFET -150 V, -2 A, 307 mΩ

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on- state resistance and optimizad for superior switching performance.

Features

• Max r_DS(on) = 307 mΩ at V_GS = -10 V, I_D = -2 A
  
• Max r_DS(on) = 356 mΩ at V_GS = -6 V, I_D = -1.8 A
  
• Very Low r_DS(on) Mid Voltage P-Channel Silicon Technology Optimised for Low Qg
  
• Optimised for Fast Switching Applications as well as Load Switch Applications
  
• 100% UIL Tested
  
• RoHS Compliant
  

Application Notes