FDMC86520L: 60V N-Channel Power Trench® MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Features

• Max r_DS(on) = 7.9 mΩ at V_GS = 10 V, I_D = 13.5 A
  
• Max r_DS(on) = 11.7 mΩ at V_GS = 4.5 V, I_D = 11.5 A
  
• Low Profile - 1 mm max in Power 33
  
• 100% UIL Tested
  
• RoHS Compliant
  

Application Notes