FDMC8884: 30V N-Channel Power Trench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features

• Max r_DS(on) = 19mΩ at V_GS = 10V, I_D = 9.0A
  
• Max r_DS(on) = 30mΩ at V_GS = 4.5V, I_D = 7.2A
  
• High performance trchnology for extremely low r_DS(on)
  
• Termination is Lead-free and RoHS Compliant
  

Application Notes