FDMD82100: 100V Dual N-Channel Power Trench® MOSFET

This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

Features

• Max r_DS(on)=19 mΩ at V_GS=10 V, I_D=7 A
  
• Max r_DS(on)=33 mΩ at V_GS= 6V, I_D=5.5 A
  
• Ideal for flexible layout in primary side of bridge topology
  
• Termination is Lead-free and RoHS Compliant
  
• 100% UIL tested
  
• Kelvin High Side MOSFET drive pin-out capability
  

Application Notes