FDMD8680: 80V Dual N-Channel PowerTrench® MOSFET

This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.

Features

• Common Source Configuration to Eliminate PCB Routing
• Large Source Pad on Bottom of Package for Enhanced Thermals
• Max r_DS(on) = 4.7 mΩ at V_GS = 10 V, I_D = 16 A
• Max r_DS(on) = 6.4 mΩ at V_GS = 8 V, I_D = 14 A
• Ideal for Flexible Layout in Secondary Side Synchronous Rectification
• 100% UIL Tested
• Termination is Lead-free and RoHS Compliant

Application Notes