FDME1023PZT: -20V Dual P-Channel PowerTrench® MOSFET

This device is designed specifically as a single package solution for the battery charges switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

Features

• Max r_DS(on) = 142 mO at V_GS = -4.5 V, I_D = -2.3 A
  
• Max r_DS(on) = 213 mO at V_GS = -2.5 V, I_D = -1.8 A
  
• Max r_DS(on)= 331 mO at V_GS = -1.8 V, I_D = -1.5 A
  
• Max r_DS(on) = 530 mO at V_GS = -1.5 V, I_D = -1.2 A
  
• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  
• Free from halogenated compounds and antimony oxides
  
• HBM ESD protection level > 1600V (Note3)
  
• RoHS Compliant
  

Application Notes