FDMS10C4D2N: 100 V N-Channel Shielded Gate PowerTrench® MOSFET

This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

• Shielded Gate MOSFET Technology
  
• Max r_DS(on) = 4.2 mΩ at V_GS = 10 V, I_D = 44 A
  
• Max r_DS(on) = 14 mΩ at V_GS = 6 V, I_D = 22 A
  
• ADD
  
• 50% lower Qrr than other MOSFET suppliers
  
• Lowers switching noise/EMI
  
• MSL1 robust package design
  
• 100% UIL tested
  
• RoHS Compliant
  

Application Notes