The FDMS1D4N03S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode.
Features
Max rDS(on) = 1.09 mΩ at VGS = 10 V, ID = 38 A
Max rDS(on) = 1.3 mΩ at VGS = 4.5 V, ID = 35 A
High Performance Technology for Extremely Low rDS(on)