FDMS2572: 150V N-Channel UltraFET Trench MOSFET

UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for low rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Features

• Max r_DS(on) = 47mΩat V_GS = 10V, I_D = 4.5A
  
• Typ Qg = 31nC at V_GS = 10 V
  
• Low Miller Charge
  
• Optimized efficiency at high frequencies
  
• UIS Capability (Single pulse and Repetitive pulse)
  
• RoHS Compliant
  

Application Notes