FDMS2D4N03S: N-Channel PowerTrench® SyncFETTM

The FDMS2D4N03S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode.

Features

• Max r_DS(on) = 1.8 mΩ at V_GS = 10 V, I_D = 28 A
  
• Max r_DS(on) = 2.34 mΩ at V_GS = 4.5 V, I_D = 26 A
  
• High Performance Technology for Extremely Low r_DS(on)
  
• SyncFET^TM Schottky Body Diode
  
• 100% UIL Tested
  
• RoHS Compliant
  

Application Notes