FDMS3660S: 30V Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

Features

• Max r_DS(on) = 8 mΩ at V_GS = 10 V, I_D = 13 A
  
• Max r_DS(on) = 11 mΩ at V_GS = 4.5 V, I_D = 11 A
  
• Max r_DS(on) = 1.8 mΩ at V_GS = 10 V, I_D = 30 A
  
• Max r_DS(on) = 2.2 mΩ at V_GS = 4.5 V, I_D = 27 A
  
• Low inductance packaging shortens rise/fall times, resulting in lower switching losses
  
• MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
  
• RoHS Compliant
  

Application Notes