FDMS5672: 60V N-Channel UltraFET Trench MOSFET

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Features

• Max r_DS(on) = 11.5mΩ at V_GS = 10V, I_D = 10.6A
  
• Max r_DS(on) = 16.5mΩ at V_GS = 6V, I_D = 8A
  
• Typ Qg = 32nC at V_GS = 10V
  
• Low Miller Charge
  
• Optimized efficiency at high frequencies
  
• RoHS Compliant
  

Application Notes