This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Advanced Package and Silicon design for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications.
MSL1 robust package design
100% UIL tested
RoHS Compliant
Ordering Code
Product
Product & Eco Status
Unit Price/1K Order
Packing Method Convention
Package Marking Convention*
FDMS7670
Full Production
Green as of Jul 2008
China RoHS
$0.3104
PQFN 5x6 8L (Power 56)
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1.1 x 5 x 6.15mm,
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