FDMS8095AC: Dual N & P-Channel PowerTrench® MOSFET

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Shrinking the area needed for implementation of active clamp topology; enabling best in class power density.

Features

• Max r_DS(on) = 30 mΩ at V_GS = 10 V, I_D = 6.2 A
  
• Max r_DS(on) = 41 mΩ at V_GS = 6 V, I_D = 5.2 A
  
• Max r_DS(on) = 1200 mΩ at V_GS = -10 V, I_D = -1 A
  
• Max r_DS(on) = 1400 mΩ at V_GS = -6 V, I_D = -0.9 A
  
• Optimised for active clamp forward converters
  
• RoHS Compliant
  

Application Notes