FDMS86252: 150V N-Channel PowerTrench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

• Max r_DS(on) = 51 mΩ at V_GS = 10 V, I_D = 4.6 A
  
• Max r_DS(on) = 70 mΩ at V_GS = 6 V, I_D = 3.9 A
  
• Advanced Package and Silicon combination for low r_DS(on) and high efficiency
  
• MSL1 robust package design
  
• 100% UIL tested
  
• RoHS Compliant
  

Application Notes