FDMS86550ET60: N-Channel PowerTrench® MOSFET

Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

• Extended TJ rating to 175°C
  
• Max r_DS(on) = 1.65 mΩ at V_GS = 10 V, I_D = 32 A
  
• Max r_DS(on) = 2.2 mΩ at V_GS = 8 V, I_D = 27 A
  
• Advanced Package and Silicon combination for low r_DS(on) and high efficiency
  
• MSL1 robust package design
  
• 100% UIL tested
  
• RoHS Compliant
  

Application Notes