FDMS8888: N-Channel PowerTrench® MOSFET 30V, 21A, 9.5m

The FDMS8888 has been designed to minimixe losses in power conversion application. The Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Features

• Max r_DS(on) = 9.5 mΩ at V_GS = 10 V, I_D = 13.5 A
  
• Max r_DS(on) = 14.5 mΩ at V_GS = 4.5 V, I_D = 10.9 A
  
• Advanced Package and Silicon combination for low r_DS(on) and high efficiency
  
• MSL1 robust package design
  
• RoHS Compliant
  

Application Notes