FDMS9600S: 30V Dual N-Channel PowerTrench® MOSFET

This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss high-side MOSFET is complemented by a low conduction loss low-side SyncFET™.

Features

• Max. R_DS(on) = 8.5mΩ at V_GS = 10V, I_D = 12A
• Max. R_DS(on) = 12.4mΩ at V_GS = 4.5V, I_D = 10A
• Max. R_DS(on) = 5.5mΩ at V_GS = 10V, I_D = 16A
• Max. R_DS(on) = 7.0mΩ at V_GS = 4.5V, I_D = 14A
• Low Q_D High-Side MOSFET
• Low R_DS(on) Low-Side MOSFET
• Thermally Efficient Dual Power 56 Package
• Pinout Optimized for Simple PCB Design
• RoHS Compliant

Application Notes