FDN304PZ: P-Channel 1.8V Specified PowerTrench ® MOSFET

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features

• -2.4A, -20V
• R_DS(ON) = 52 mΩ @ V_GS = -4.5V
• R_DS(ON) = 70 mΩ @ V_GS = -2.5V
• R_DS(ON) = 100 mΩ @ V_GS = -1.8V
• Fast switching speed
• ESD protection diode
• High performance trench technology for extremelylow R_DS(ON)
• SuperSOT™ -3 provides low R_DS(ON) and 30% higherpower handling capability than SOT23 in the samefootprint

Application Notes