FDN306P: P-Channel 1.8V Specified PowerTrench ®MOSFET

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features

• -2.6 A, -12 V
• R_DS(ON) = 40 mΩ @ V_GS = -4.5 V
• R_DS(ON) = 50 mΩ @ V_GS = -2.5 V
• R_DS(ON) = 80 mΩ @ V_GS = -1.8 V
• Fast switching speed
• High performance trench technology for extremelylow R_DS(ON)
• SuperSOT™-3 provides low R_DS(ON) and 30% higherpower handling capability than SOT23 in the samefootprint

Application Notes