FDN327N: N-Channel 1.8 Vgs Specified PowerTrench® MOSFET

This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.

Features

• 2 A, 20 V
• R_DS(ON) = 70 mΩ @ V_GS = 4.5 V
• R_DS(ON) = 80 mΩ @ V_GS = 2.5 V
• R_DS(ON) = 120 mΩ @ V_GS = 1.8 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremelylow R_DS(on)

Application Notes