FDN337N: N-Channel Logic-Level Enhancement Mode Field Effect Transistor

SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and     other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features

• 2.2 A, 30 V, R_DS(ON) = 0.065 Ω @ V_GS = 4.5 V, R_DS(ON) = 0.082 Ω @ V_GS = 2.5 V.
• Industry standard outline SOT-23 surface mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
• High density cell design for extremely low R_DS(ON).
• Exceptional on-resistance and maximum DC current capability.

Application Notes