FDP027N08B: N-Channel PowerTrench® MOSFET 80V, 223A, 2.7mΩ _ BDTIC a Leading Distributor in China

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FDP027N08B: N-Channel PowerTrench® MOSFET 80V, 223A, 2.7mΩ

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

FDP027N08B Datasheet

Features

R_DS(on) = 2.21mΩ ( Typ.) @ V_GS = 10V, I_D = 100A
Low FOM R_DS(on) *Q_G
Low Reverse Recovery Charge, Q_rr = 112nC
Soft Reverse Recovery Body Diode
Enables High Efficiency in Synchronous Rectification
Fast Switching Speed
100% UIL Tested
RoHS Compliant

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
FDP027N08B_F102	Full Production Green as of Nov 2011 China RoHS	$3.24	TO-220 3L - 4.5 x 10 x 15.35mm, RAIL TO-220 3L Drawing Last Update: Oct 2015 TO220-3L, JEDEC VARIATION AB (DELTA), PACKING DRAWING Last Update: May 2013	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2FDP Line 3027N08B

Application Notes

AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014

AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011

AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011

AN-9010 MOSFET Basics Last Update : 09-Sep-2013

AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014

AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011

AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011

AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016

AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014

AN-6099 New PowerTrench® MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications Last Update : 28-Jun-2014

Datasheet: FDP027N08B.pdf













Other: Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014; Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016; New PowerTrench® MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications Last Update : 28-Jun-2014; A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011; A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011; A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011; Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014; MOSFET Basics Last Update : 09-Sep-2013; Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011; FRFET® in Synchronous Rectification Last Update : 28-Jun-2014; TO220-3L, JEDEC VARIATION AB (DELTA), PACKING DRAWING Last Update: May 2013; TO-220 3L Drawing Last Update: Oct 2015

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