FDP047N10: N-Channel PowerTrench® MOSFET 100V, 164A, 4.7mΩ

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Features

• R_DS(on) = 3.9mΩ ( Typ.) @ V_GS = 10V, I_D = 75A
• Fast switching speed
• Low Gate Charge
• High performance trench technology for extremely low R_DS(on)
• High power and current handing capability
• RoHS compliant

Application Notes