FDP2710_F085: 250V, 50A, 38mΩ, TO-220N-Channel PowerTrench®

This N-Channel MOSFET is produced using Fairchil Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

• Typ r_DS(on) = 38mΩ at V_GS = 10V, I_D = 50A
• Typ Q_g(TOT) = 78nC at V_GS = 10V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R_DS(on)
• High power and current handling capability
• Qualified to AEC Q101
• RoHS Compliant