FDPC8014AS: 25V Asymmetric Dual N-Channel MOSFET

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.

Features

• Max r_DS(on) = 3.8 mΩ at V_GS = 10 V, I_D = 20 A
  
• Max r_DS(on) = 4.7 mΩ at V_GS = 4.5 V, I_D = 18 A
  
• Max r_DS(on) = 1.0 mΩ at V_GS = 10 V, I_D = 40 A
  
• Max r_DS(on) = 1.2 mΩ at V_GS = 4.5 V, I_D = 37 A
  
• Low Inductance Packaging Shortens Rise/fall Times, Resulting
• MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch
• RoHS Compliant
  

Application Notes