FDS3692: Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package

Features

• r_DS(ON) = 50mΩ (Typ.), V_GS = 10V, I_D = 4.5A
• Q_g(tot) = 11nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Q_RR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
• Formerly developmental type 82745

Application Notes