FDS4465: P-Channel 1.8V Specified PowerTrench® MOSFET

This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V).

Features

• -13.5 A, -20 V.
• R_DS(on) = 8.5mΩ @ V_GS = - 4.5V
• R_DS(on) = 10.5mΩ @ V_GS = - 2.5V
• R_DS(on) = 14mΩ @ V_GS = - 1.8V
• Fast switching speed
• High performance trench technology for extremelylow R_DS(ON)
• High current and power handling capability

Application Notes