FDS4501H: Complementary PowerTrench® Half-Bridge MOSFET

This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• 9.3 A, 30 V
• R_DS(ON) = 18 mΩ @ V_GS = 10 V
• R_DS(ON) = 23 mΩ @ V_GS = 4.5 V
• -5.6A, -20 V
• R_DS(ON) = 46 mΩ @ V_GS = -4.5V
• R_DS(ON) = 63 mΩ @ V_GS = -2.5V

Application Notes