FDS6375: Single P-Channel 2.5V Specified PowerTrench® MOSFFET

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V)

Features

• -8.0 A, -20 V
  
• R_DS(on) = 24 mΩ @ V_GS = -4.5 V
  
• R_DS(on) = 32 mΩ @ V_GS = -2.5 V
  
• Low gate charge (26nC typical)
  
• Fast switching speed
  
• High performance trench technology for extremely low R_DS(ON)
  
• High power and current handling capability
  

Application Notes