FDS6890A: Dual N-Channel 2.5V Specified PowerTrench® MOSFET

These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• 7.5 A, 20 V. R_DS(ON) = 0.018 Ω @ V_GS = 4.5 VR_DS(ON) = 0.022 Ω @ V_GS = 2.5 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely low R_DS(ON).
• High power and current handling capability.

Application Notes