FDS86141: 100V N-Channel Power Trench® MOSFET

This N-channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench™ process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

• Max r_DS(on) = 23 mΩ at V_GS = 10 V, I_D = 7 A
• Max r_DS(on) = 36 mΩ at V_GS = 6 V, I_D = 5.5 A
• Low Profile - 1 mm max in Power 33
• 100% UIL Tested
• RoHS Compliant

Application Notes