FDS86252: 150V N-Channel Power Trench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.

Features

• Max r_DS(on) = 55 mΩ at V_GS = 10 V, I_D = 4.5 A
• Max r_DS(on) = 80 mΩ at V_GS = 6 V, I_D = 3.7 A
• High performance trench technology for extremely low r_DS(on)
• High power and current handling capability in a widely used surface mount package
• 100% UIL Tested
• RoHS Compliant

Application Notes