FDS8858CZ: 30V Dual N & P-Channel PowerTrench® MOSFET

These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

• Max. R_DS(on) = 17mΩ at V_GS = 10V, I_D = 8.6A
• Max. R_DS(on) = 20mΩ at V_GS = 4.5V, I_D = 7.3A
• Max. R_DS(on) = 20.5mΩ at V_GS = -10V, I_D = -7.3A
• Max. R_DS(on) = 34.5mΩ at V_GS = -4.5V, I_D = -5.6A
• High power and handing capability in a widely used surface-mount package
• Fast switching speed

Application Notes