FDS8935: -80V Dual P-Channel PowerTrench® MOSFET

This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.

Features

• Max r_DS(on) = 183 mO at V_GS = -10 V, I_D = -2.1 A
• Max r_DS(on) = 247 mO at V_GS = -4.5 V, I_D = -1.9 A
• High performance trench technology for extremely low r_DS(on)
• High power and current handling capability in a widely usedsurface mount package
• 100% UIL Tested
• RoHS Compliant

Application Notes