FDS9934C: 20V Complementary PowerTrench® MOSFET

These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

• R_DS(ON) = 30 mΩ @ V_GS = 4.5V
• R_DS(ON) = 43 mΩ @ V_GS = 2.5V
• R_DS(ON) = 55 mΩ @ V_GS = -4.5V
• R_DS(ON) = 90 mΩ @ V_GS = -2.5V

Application Notes