FDS9958_F085: -60 V Dual P-Channel PowerTrench®
These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance
These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.
Features
- Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A
- Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A
- Qualified to AEC Q101
- RoHS Compliant
Ordering Code| Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
|---|
| FDS9958_F085 | Full Production
Green as of Dec 2009
China RoHS | $0.7276 | SO 8L NB
-
1.75 x 3.9 x 4.9mm,
TAPE REEL | Line 1$Y (Fairchild logo)
&Z (Plant Code)
&2 (2-Digit Date Code)
&K
Line 2FDS
Line 39958
|
Application Notes
AN-1029 Maximum Power Enhancement Techniques for SO-8 Power MOSFETs Last Update : 05-Mar-2011
