FDT439N: N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.

Features

• 6.3 A, 30 V. R_DS(on) = 0.045 Ω @ V_GS = 4.5 V
  R_DS(on) = 0.058 Ω @ V_GS = 2.5 V
  
• Fast switching speed
  
• High power and current handling capabitlity in a widely used surface mount package
  

Application Notes