FDV301N: N-Channel,Digital FET

This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.

Features

• 25 V, 0.22 A continuous, 0.5 A Peak.
  
  • RDS(ON) = 5 Ω @ VGS= 2.7 V
  • RDS(ON) = 4 Ω @ VGS= 4.5 V
• RDS(ON) = 5 Ω @ VGS= 2.7 V
  
• RDS(ON) = 4 Ω @ VGS= 4.5 V
  
• Very low level gate drive requirements allowing direct operation in 3V circuits. V_GS(th) < 1.06V
  
• Gate-Source Zener for ESD ruggedness.
  
  • >6kV Human Body Model.
• >6kV Human Body Model.
  
• Replace multiple NPN digital transistors with one DMOS FET.
  

Application Notes