FDY2000PZ: -20V Dual P-Channel Specified PowerTrench® MOSFET

This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(ON) @ VGS = - 2.5v.

Features

• -350 mA, -20 V
• R_DS(ON) = 1.2 Ω @ V_GS = - 4.5 V
• R_DS(ON) = 1.6 Ω @ V_GS = - 2.5 V
• ESD protection diode (note 3)
• RoHS Compliant

Application Notes