- 简体中文
- English
FFH30S60S: 30A, 600V, STEALTH™ II Diode
The FFH30S60S is STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
| FFH30S60S Datasheet |
Features
- Stealth recovery, Trr = 40ns (@IF= 30A)
- Max Forward Voltage, VF = 2.6V (@ TC = 25°C)
- 600V Reverse Voltage and High Reliability
- Avalanche Energy Rated
- RoHS compliant
| Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
|---|---|---|---|---|
| FFH30S60STU | Full Production Green as of Aug 2013 China RoHS | $2.04 | TO-247 2L
-
4.7 x 15.62 x 36.57mm,
RAIL
| Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
Line 3F30S60S |
- TO-247 2L Drawing Last Update: Sep 2016
- TO247-2L, JEDEC OPTION AB, PACKING DRAWING Last Update: Nov 2015
©1993 - 2024 BDTIC
