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FFPF08S60SN: 8A, 600V, STEALTH™ II Diode
The FFPF08S60SN is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
| FFPF08S60SN Datasheet |
Features
- Stealth recovery Trr = 25ns (@IF= 8A)
- Max Forward Voltage, VF = 3.4V (@ TC = 25°C)
- 600V Reverse Voltage and High Reliability
- Avalanche Energy Rated
- RoHS compliant
| Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
|---|---|---|---|---|
| FFPF08S60SNTU | Full Production Green as of Apr 2010 China RoHS | $0.726 | TO-220F 2L
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4.7 x 10.16 x 28.85mm,
RAIL
| Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
Line 2F08S60SN |
- TO-220F 2L Drawing Last Update: Oct 2015
- TO220-2L, FULLPACK, PACKING DRAWING Last Update: May 2013
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