FFSH20120A: Silicon Carbide Schottky Diode _ BDTIC a Leading Distributor in China

FFSH20120A: Silicon Carbide Schottky Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased powerdensity, reduced EMI, and reduced system size and cost.

FFSH20120A Datasheet

Features

Max Junction Temperature 175 °C
Avalanche Rated 200 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
FFSH20120A	Full Production Green as of Nov 2016 China RoHS	$11	TO-247 2L - 4.7 x 15.62 x 36.57mm, RAIL TO-247 2L Drawing Last Update: Sep 2016 TO247-2L, JEDEC OPTION AB, PACKING DRAWING Last Update: Nov 2015	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2FFSH Line 320120A

FFSH20120A.pdf

TO-247 2L Drawing Last Update: Sep 2016

TO247-2L, JEDEC OPTION AB, PACKING DRAWING Last Update: Nov 2015

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