FFSH20120ADN: Silicon Carbide Schottky Diode _ BDTIC a Leading Distributor in China

FFSH20120ADN: Silicon Carbide Schottky Diode

SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over-voltage conditions

FFSH20120ADN Datasheet

Features

Max Junction Temperature 175 °C
Avalanche Rated 105 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
FFSH20120ADN_F155	Full Production Green as of Jan 2016 China RoHS	$11.75	TO-247 3L - 4.7 x 15.62 x 20.57mm, RAIL TO-247 3L Drawing Last Update: Aug 2016 Tube Packing Drawing Last Update: Nov 2015	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2FFSH Line 320120ADN

FFSH20120ADN.pdf

TO-247 3L Drawing Last Update: Aug 2016

Tube Packing Drawing Last Update: Nov 2015

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