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FFSH40120ADN: Silicon Carbide Schottky Diode
SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semicon-ductor material - Silicon Carbide, enables higher operating fre-quency, and helps increasing power density and reduction ofsystem size/cost. Its high reliability ensures robust operation during surge or over-voltage conditions
| FFSH40120ADN Datasheet |
Features
- Max Junction Temperature 175 °C
- Avalanche Rated 200 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
| Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
|---|---|---|---|---|
| FFSH40120ADN_F155 | Full Production Green as of Feb 2015 China RoHS | $23.5 | TO-247 3L
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4.7 x 15.62 x 20.57mm,
RAIL
| Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
Line 2FFSH |
- TO-247 3L Drawing Last Update: Aug 2016
- Tube Packing Drawing Last Update: Nov 2015
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