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FFSP20120A: Silicon Carbide Schottky Diode
SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust 0toperation during surge or over-voltage conditions
| FFSP20120A Datasheet |
Features
- Max Junction Temperature 175°C
- Avalanche Rated 200 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
| Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
|---|---|---|---|---|
| FFSP20120A | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $13.42 | TO-220 2L
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4.83 x 10.67 x 31.24mm,
RAIL
| Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
Line 2FFSP |
- TO-220 2L Drawing Last Update: Jan 2016
- TO220-2L, PACKING DRAWING Last Update: Nov 2014
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