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Fairchild Semiconductor
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Bipolar Transistors
> FJB102
FJB102: 100V High Voltage Power Darlington Transistor
FJB102 Datasheet
Features
High DC Current Gain : h
FE
=1000 @ V
CE
= 4 V, I
C
= 3 A (Min.)
Low Collector-Emitter Saturation Voltage
High Collector-Emitter Sustaining Voltage
Monolithic Construction with Built-in Base-Emitter Shunt Resistors
Industrial Use
Ordering Code
Product
Product & Eco Status
Unit Price/1K Order
Packing Method Convention
Package Marking Convention*
FJB102TM
Full Production ROHS Compliant as of 27-Feb-2006 China RoHS
$0.371
TO-263 2L (D2PAK) - 4.445 x 10.16 x 15.24mm, TAPE REEL
TO-263 2L (D2PAK) Drawing
Last Update: May 2016
TO263-2L, SURFACE MOUNT, VARIATION AB,PACKING DRAWING
Last Update: Oct 2016
TO263-2L, PACKING DRAWING
Last Update: May 2013
TO263_TUBE PACKING DRAWING
Last Update: Jun 2013
Line 1
$Y
(Fairchild logo)
&Z
(Plant Code)
&3
(3-Digit Date Code)
&K
Line 3
FJB102
FJB102.pdf
TO-263 2L (D2PAK) Drawing
Last Update: May 2016
TO263-2L, SURFACE MOUNT, VARIATION AB,PACKING DRAWING
Last Update: Oct 2016
TO263-2L, PACKING DRAWING
Last Update: May 2013
TO263_TUBE PACKING DRAWING
Last Update: Jun 2013
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